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| FMMT549 PNP Low Saturation Transistor August 2006 FMMT549 PNP Low Saturation Transistor Features * ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. * Sourced from process PB. tm 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol VCEO VCBO VEBO IC TJ TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Ta = 25C unless otherwise noted Parameter Value -30 -35 -5 -1 -2 150 - 55 ~ 150 Unit V V V A A C C Collector Current - Continuous - Peak Pulse Current Junction Temperature Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics * Symbol PD RJA Parameter Total Device Dissipation, by RJA Derate above 25C Thermal Resistance, Junction to Ambient in2 of 2 oz copper. Value 500 4 250 Unit mW mW/C C/W * Device mounted on FR-4 PCB 4.5" X 5", mounting pad 0.02 (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FMMT549 Rev. C FMMT549 PNP Low Saturation Transistor Electrical Characteristics* Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE TC = 25C unless otherwise noted Parameter Conditions Min. -30 -35 -5.0 Max. Units V V V Collector-Emitter Breakdown Voltage * IC = -10mA, IB = 0 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = -100A, IE = 0 IE = -100A, IC = 0 VCB = -30V, IE = 0 VCB = -30V, IE = 0, Ta = 100C VEB= -4.0V, IC=0 VCE = -2.0V, IC = -50mA VCE = -2.0V, IC = -500mA VCE = -2.0V, IC = -1A VCE = -2.0V, IC = -2A IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -1A, IB = -100mA IC = -1A, VCE = -2.0V IC = -100mA, VCE = -5V, f = 100MHz VCB = -10V, IE = 0, f = 1MHz -100 -10 -100 nA A nA On Characteristics * DC Current Gain 70 100 80 40 300 VCE (sat) VBE (sat) VBE (on) fT Cob Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage -500 -750 -1.25 -1.0 mV mV V V Small Signal Characterics Current Gain Bandwidth Product Output Capacitance 100 25 MHz pF * DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2% 2 FMMT549 Rev. C www.fairchildsemi.com FMMT549 PNP Low Saturation Transistor Typical Characteristics Collector- Emitter Voltage vs Collector current 800 700 4mA 3.5mA Current Gain vs Collector Current 600 Vce = 2.0V Collector Current, Ic [mA] 500 600 500 400 300 200 100 0 0 1 2 3mA 2.5mA 2mA 1.5mA 1mA Ib=0.5mA H FE - CURRENT GAIN 400 300 125C 25C 200 100 0 0.0001 - 40C 3 4 5 Collector-Emitter Voltage, Vce[V] 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VBESAT -BASE-EMITTER SATURATION VOLTAGE(V) V BEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter On Voltage vs Collector Current 1.6 Vce = 2.0V Base-Emitter Saturation Voltage vs Collector Current 1.6 1.4 1.2 1 0.8 0.6 125 C 25 C - 40 C 1.4 1.2 1 - 40 C = 10 0.8 0.6 25 C 0.4 0.2 0.0001 125 C 0.4 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current 1.2 = 10 - 40C Input/Output Capacitance vs Reverse Bias Voltage 120 f Vce = 2.0V = 1.0MHz 1 0.8 0.6 CAPACITANCE (pf) 125C 100 C ibo 80 60 40 20 0 0.1 Cobo 25C 0.4 0.2 0 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 3 FMMT549 Rev. C www.fairchildsemi.com FMMT549 PNP Low Saturation Transistor Package Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters 4 FMMT549 Rev. C www.fairchildsemi.com FMMT549 PNP Low Saturation Transistor FMMT549 PNP Low Saturation Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 FMMT549 Rev. C www.fairchildsemi.com |
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